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期刊名字![]() | IEEE Journal of the Electron Devices Society IEEE J ELECTRON DEVI (此期刊被最新的JCR期刊SCIE收录) LetPub评分 6.3
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声誉 7.1 影响力 5.0 速度 9.4 | |||||||||||||||||||||||||
| 期刊ISSN | 2168-6734 | 安装APP,查看期刊最新消息
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| 2025-2026最新IF (数据来源于网友提供) | 注册或登录后,查看IF | |||||||||||||||||||||||||
| 实时影响因子 | 截止2026年5月06日:2.86 | |||||||||||||||||||||||||
| 2025-2026自引率 | 3.4%点击查看自引率趋势图 | |||||||||||||||||||||||||
| 五年IF (数据来源于网友提供) | 2.705数据由网友[cloudy雪18]收集提供 | |||||||||||||||||||||||||
| h-index | 23 | |||||||||||||||||||||||||
| CiteScore ( 2026年6月最新版) |
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| 期刊简介 |
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| 期刊官方网站 | https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494 | |||||||||||||||||||||||||
期刊投稿格式模板 VIP专享 |
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| 期刊投稿网址 | http://mc.manuscriptcentral.com/jeds | |||||||||||||||||||||||||
| 该期刊中国学者近期发文 - New | An Improved SVR-Based Broadband Behavioral Model for RF Power Transistors Author: Gao, Zhiwei; Crupi, Giovanni; Cai, Jialin Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 274-286. DOI: 10.1109/JEDS.2026.3693317 Microchannel Cooling for Performance Enhancement of GaN-on-Si HEMT With a Low Rj-a of 13.5 K/W Author: Zhou, Jiajun; Feng, Xin; Zhang, Weihang; Dang, Kui; Zhang, Yachao; Ren, Zeyang; He, Yanjing; Liu, Xianhe; Zhou, Hong; Liu, Zhihong; Hao, Yue; Zhang, Jincheng Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 85-92. DOI: 10.1109/JEDS.2026.3658238 Miller-Current Suppressing Technology for False Turn-On Protection of Commercial p-GaN HEMTs Author: Liu, Ziheng; He, Jiayin; Peng, Hongjie; Gao, Ju; Xia, Wenbo; Ao, Chengkang; Wang, Jinyan; Wang, Maojun; Wei, Jin; Xie, Yong Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 113-121. DOI: 10.1109/JEDS.2026.3661537 Simulation Study on the Scalability of Channel-All-Around Reconfigurable Field-Effect Transistors With Gate-Controlled Polarity Author: Huo, Ran; Ou, Shijun; Wu, Zhehao; Zhang, Han; Lv, Bowen; Shao, Yvyang; Ma, Zichao; Zhang, Min; Chan, Mansun; Zhou, Changjian Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 93-101. DOI: 10.1109/JEDS.2026.3659128 | |||||||||||||||||||||||||
| 期刊语言要求 | 经LetPub语言功底雄厚的美籍native English speaker精心编辑的稿件,不仅能满足IEEE Journal of the Electron Devices Society的语言要求,还能让IEEE Journal of the Electron Devices Society编辑和审稿人得到更好的审稿体验,让稿件最大限度地被IEEE Journal of the Electron Devices Society编辑和审稿人充分理解和公正评估。LetPub的专业SCI论文编辑服务(包括SCI论文英语润色,同行资深专家修改润色,SCI论文专业翻译,SCI论文格式排版,专业学术制图等)帮助作者准备稿件,已助力全球15万+作者顺利发表论文。部分发表范例可查看:服务好评 论文致谢 。
提交文稿 | |||||||||||||||||||||||||
| 是否OA开放访问 | Yes | |||||||||||||||||||||||||
OA期刊相关信息![]() | 文章处理费:需要( USD1350; ) 文章处理费豁免:查看说明 其他费用:没有 期刊主题关键词:field effect transistors、logic gates、integrated circuit devices、display technologies、wearable devices 相关链接:Aims & ScopeAuthor InstructionsEditorial BoardAnonymous peer review | |||||||||||||||||||||||||
| 通讯方式 | 445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141 | |||||||||||||||||||||||||
| 出版商 | Institute of Electrical and Electronics Engineers Inc. | |||||||||||||||||||||||||
| 涉及的研究方向 | Biochemistry, Genetics and Molecular Biology-Biotechnology | |||||||||||||||||||||||||
| 出版国家或地区 | UNITED STATES | |||||||||||||||||||||||||
| 出版语言 | English | |||||||||||||||||||||||||
| 出版周期 | ||||||||||||||||||||||||||
| 出版年份 | 0 | |||||||||||||||||||||||||
| 年文章数 | 179点击查看年文章数趋势图 | |||||||||||||||||||||||||
| Gold OA文章占比 | 100.00% | |||||||||||||||||||||||||
| 研究类文章占比: 文章 ÷(文章 + 综述) | 100.00% | |||||||||||||||||||||||||
| 期刊分区表预警名单 | 2026年03月发布的新锐学术版:不在预警名单中 2025年03月发布的2025版:不在预警名单中 2024年02月发布的2024版:不在预警名单中 2023年01月发布的2023版:不在预警名单中 2021年12月发布的2021版:不在预警名单中 2020年12月发布的2020版:不在预警名单中 | |||||||||||||||||||||||||
| 《新锐期刊分区表》 ( 2026年3月发布) | 点击查看期刊分区表趋势图
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| 期刊分区表 ( 2025年3月升级版) |
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| 期刊分区表 ( 2023年12月旧的升级版) |
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| SCI期刊收录coverage | Science Citation Index Expanded (SCIE) (2020年1月,原SCI撤销合并入SCIE,统称SCIE) Scopus (CiteScore) Directory of Open Access Journals (DOAJ) | |||||||||||||||||||||||||
| PubMed Central (PMC)链接 | http://www.ncbi.nlm.nih.gov/nlmcatalog?term=2168-6734%5BISSN%5D | |||||||||||||||||||||||||
| 平均审稿速度 | 网友分享经验: 9 Weeks | |||||||||||||||||||||||||
| 平均录用比例 | 网友分享经验: | |||||||||||||||||||||||||
| 版面费/APC文章处理费信息 | 文章处理费:需要( USD1350; ) 文章处理费豁免:查看说明 其他费用:没有 LetPub提供文章处理费(APC)支持服务,可以用人民币支付版面费啦! | |||||||||||||||||||||||||
| LetPub助力发表 | 经LetPub编辑的稿件平均录用比例是未经润色的稿件的1.5倍,平均审稿时间缩短40%。众多作者在使用LetPub的专业SCI论文编辑服务(包括SCI论文英语润色,同行资深专家修改润色,SCI论文专业翻译,SCI论文格式排版,专业学术制图等)后论文在IEEE Journal of the Electron Devices Society顺利发表。
快看看作者怎么说吧:服务好评 论文致谢 。 提交文稿 | |||||||||||||||||||||||||
| 期刊常用信息链接 | ||||||||||||||||||||||||||
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| 中国学者近期发表的论文 | |
| 1. | An Improved SVR-Based Broadband Behavioral Model for RF Power Transistors Author: Gao, Zhiwei; Crupi, Giovanni; Cai, Jialin Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 274-286. DOI: 10.1109/JEDS.2026.3693317 DOI |
| 2. | Microchannel Cooling for Performance Enhancement of GaN-on-Si HEMT With a Low Rj-a of 13.5 K/W Author: Zhou, Jiajun; Feng, Xin; Zhang, Weihang; Dang, Kui; Zhang, Yachao; Ren, Zeyang; He, Yanjing; Liu, Xianhe; Zhou, Hong; Liu, Zhihong; Hao, Yue; Zhang, Jincheng Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 85-92. DOI: 10.1109/JEDS.2026.3658238 DOI |
| 3. | Miller-Current Suppressing Technology for False Turn-On Protection of Commercial p-GaN HEMTs Author: Liu, Ziheng; He, Jiayin; Peng, Hongjie; Gao, Ju; Xia, Wenbo; Ao, Chengkang; Wang, Jinyan; Wang, Maojun; Wei, Jin; Xie, Yong Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 113-121. DOI: 10.1109/JEDS.2026.3661537 DOI |
| 4. | Simulation Study on the Scalability of Channel-All-Around Reconfigurable Field-Effect Transistors With Gate-Controlled Polarity Author: Huo, Ran; Ou, Shijun; Wu, Zhehao; Zhang, Han; Lv, Bowen; Shao, Yvyang; Ma, Zichao; Zhang, Min; Chan, Mansun; Zhou, Changjian Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 93-101. DOI: 10.1109/JEDS.2026.3659128 DOI |
| 5. | Research on 4H-SiC Photoconductive Semiconductor Switch Employing Composite Anti-Reflection Coating Author: Lv, Haojie; Yu, Xiaoqing; Li, Lun; Zhang, Peiyu Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 137-144. DOI: 10.1109/JEDS.2026.3662337 DOI |
| 6. | Evaluation of Interface Traps Within Drift Region in LDMOS Using a Multi-Pulse Test Method Author: Guo, Qianwen; Cao, Jiawei; Zhou, Ke; Liu, Fang; Zhao, Dongyan; Chen, Yanning; Wu, Bo; Deng, Yongfeng; Gao, Dawei; Ke, Xugang; Li, Junkang; Zhang, Rui Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 145-150. DOI: 10.1109/JEDS.2026.3661617 DOI |
| 7. | Dynamic Evolution of Hydrogen in IGZO Transistors for PBTI Improvement by Low-Temperature Atmosphere Annealing Author: Xiang, Liang; Yan, Gangping; Yang, Hong; Yang, Shangbo; Xu, Gaobo; Sun, Mingyang; Wang, Guilei; Yin, Huaxiang; Wang, Xiaolei; Luo, Jun; Wang, Wenwu Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 30-35. DOI: 10.1109/JEDS.2025.3642582 DOI |
| 8. | Understanding Frequency Dependence of Trap Generation Under AC Positive Bias Temperature Instability Stress in Si n-FinFETs Author: Shi, Yunfei; Chang, Hao; Yang, Hong; Zhang, Qiangzhu; Liu, Qianqian; Tang, Bo; Zhou, Longda; Ji, Zhigang; Li, Junjie; He, Xiaobin; Li, Junfeng; Yin, Huaxiang; Wang, Xiaolei; Luo, Jun; Wang, Wenwu Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 450-455. DOI: 10.1109/JEDS.2025.3567049 DOI |
| 9. | Impact of the Schottky Barrier Height on the Carrier Velocity Overshoot Behaviors in SOI nMOSFETs With Metal Source/Drain Author: Su, Rui; Jing, Yan; Zhang, Xinyi; Jiang, Yi; Gao, Dawei; Schwarzenbach, Walter; Nguyen, Bich-Yen; Li, Junkang; Robertson, John; Zhang, Rui Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 464-470. DOI: 10.1109/JEDS.2025.3569242 DOI |
| 10. | Optimize Gate-All-Around Devices Using Wide Neural Network-Enhanced Bayesian Optimization Author: Shen, Jiaye; Li, Zhiqiang; Yao, Zhenjie Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 456-463. DOI: 10.1109/JEDS.2025.3569528 DOI |
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