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IEEE Journal of the Electron Devices Society 期刊收藏夹

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IEEE Journal of the Electron Devices Society期刊基本信息Hello,您是该期刊的第63246位访客

基本信息 登录收藏
期刊名字IEEE Journal of the Electron Devices SocietyIEEE Journal of the Electron Devices Society

IEEE J ELECTRON DEVI
(此期刊被最新的JCR期刊SCIE收录)

LetPub评分
6.3
51人评分
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声誉
7.1

影响力
5.0

速度
9.4

期刊ISSN2168-6734
安装APP,查看期刊最新消息
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2025-2026最新IF
(数据来源于网友提供)
注册登录后,查看IF
实时影响因子 截止2026年5月06日:2.86
2025-2026自引率3.4%点击查看自引率趋势图
五年IF
(数据来源于网友提供)
2.705数据由网友[cloudy雪18]收集提供
h-index 23
CiteScore
2026年6月最新版
CiteScoreSJRSNIPCiteScore排名
4.800.5061.217
学科分区排名百分位
大类:Engineering
小类:Electrical and Electronic Engineering
Q2338 / 1030
大类:Engineering
小类:Electronic, Optical and Magnetic Materials
Q2130 / 318
大类:Engineering
小类:Biotechnology
Q2152 / 325

期刊简介
The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC's, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
期刊官方网站https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494
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此模板来自于期刊/出版社官网。开通VIP可免费下载,并享1w+期刊模板资源。
期刊投稿网址http://mc.manuscriptcentral.com/jeds
该期刊中国学者近期发文 - NewAn Improved SVR-Based Broadband Behavioral Model for RF Power Transistors
Author: Gao, Zhiwei; Crupi, Giovanni; Cai, Jialin
Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 274-286. DOI: 10.1109/JEDS.2026.3693317


Microchannel Cooling for Performance Enhancement of GaN-on-Si HEMT With a Low Rj-a of 13.5 K/W
Author: Zhou, Jiajun; Feng, Xin; Zhang, Weihang; Dang, Kui; Zhang, Yachao; Ren, Zeyang; He, Yanjing; Liu, Xianhe; Zhou, Hong; Liu, Zhihong; Hao, Yue; Zhang, Jincheng
Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 85-92. DOI: 10.1109/JEDS.2026.3658238


Miller-Current Suppressing Technology for False Turn-On Protection of Commercial p-GaN HEMTs
Author: Liu, Ziheng; He, Jiayin; Peng, Hongjie; Gao, Ju; Xia, Wenbo; Ao, Chengkang; Wang, Jinyan; Wang, Maojun; Wei, Jin; Xie, Yong
Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 113-121. DOI: 10.1109/JEDS.2026.3661537


Simulation Study on the Scalability of Channel-All-Around Reconfigurable Field-Effect Transistors With Gate-Controlled Polarity
Author: Huo, Ran; Ou, Shijun; Wu, Zhehao; Zhang, Han; Lv, Bowen; Shao, Yvyang; Ma, Zichao; Zhang, Min; Chan, Mansun; Zhou, Changjian
Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 93-101. DOI: 10.1109/JEDS.2026.3659128


期刊语言要求经LetPub语言功底雄厚的美籍native English speaker精心编辑的稿件,不仅能满足IEEE Journal of the Electron Devices Society的语言要求,还能让IEEE Journal of the Electron Devices Society编辑和审稿人得到更好的审稿体验,让稿件最大限度地被IEEE Journal of the Electron Devices Society编辑和审稿人充分理解和公正评估。LetPub的专业SCI论文编辑服务(包括SCI论文英语润色同行资深专家修改润色SCI论文专业翻译SCI论文格式排版专业学术制图等)帮助作者准备稿件,已助力全球15万+作者顺利发表论文。部分发表范例可查看:服务好评 论文致谢
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是否OA开放访问Yes
OA期刊相关信息
文章处理费:需要( USD1350; )
文章处理费豁免:查看说明
其他费用:没有
期刊主题关键词:field effect transistors、logic gates、integrated circuit devices、display technologies、wearable devices
相关链接:Aims & ScopeAuthor InstructionsEditorial BoardAnonymous peer review
通讯方式445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
出版商Institute of Electrical and Electronics Engineers Inc.
涉及的研究方向Biochemistry, Genetics and Molecular Biology-Biotechnology
出版国家或地区UNITED STATES
出版语言English
出版周期
出版年份0
年文章数 179点击查看年文章数趋势图
Gold OA文章占比100.00%
研究类文章占比:
文章 ÷(文章 + 综述)
100.00%
期刊分区表预警名单 2026年03月发布的新锐学术版:不在预警名单中

2025年03月发布的2025版:不在预警名单中

2024年02月发布的2024版:不在预警名单中

2023年01月发布的2023版:不在预警名单中

2021年12月发布的2021版:不在预警名单中

2020年12月发布的2020版:不在预警名单中
《新锐期刊分区表》
2026年3月发布
点击查看期刊分区表趋势图
大类学科小类学科Top期刊综述期刊
工程技术 1区3区1区
ENGINEERING, ELECTRICAL & ELECTRONIC
工程:电子与电气
4区2区3区
N/A
期刊分区表
2025年3月升级版
大类学科小类学科Top期刊综述期刊
工程技术 1区3区1区
ENGINEERING, ELECTRICAL & ELECTRONIC
工程:电子与电气
1区3区4区
期刊分区表
2023年12月旧的升级版
大类学科小类学科Top期刊综述期刊
工程技术 1区3区2区
ENGINEERING, ELECTRICAL & ELECTRONIC
工程:电子与电气
4区3区4区
SCI期刊收录coverage Science Citation Index Expanded (SCIE) (2020年1月,原SCI撤销合并入SCIE,统称SCIE)
Scopus (CiteScore)
Directory of Open Access Journals (DOAJ)
PubMed Central (PMC)链接http://www.ncbi.nlm.nih.gov/nlmcatalog?term=2168-6734%5BISSN%5D
平均审稿速度网友分享经验:
9 Weeks
平均录用比例网友分享经验:
版面费/APC文章处理费信息
文章处理费:需要( USD1350; )
文章处理费豁免:查看说明
其他费用:没有
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期刊常用信息链接
同领域相关期刊 IEEE Journal of the Electron Devices Society期刊近年CiteScore指标趋势图
该杂志的自引率趋势图 IEEE Journal of the Electron Devices Society期刊分区表趋势图
该杂志的年文章数趋势图 同领域作者分享投稿经验
IEEE Journal of the Electron Devices Society上中国学者近期发表的论文  
  • 同领域相关期刊
  • 期刊CiteScore趋势图
  • 期刊自引率趋势图
  • 期刊分区表趋势图
  • 年文章数趋势图
  • 该期刊中国学者近期发文
  • 期刊分区表相关期刊
  • 同类著名期刊名称 h-index CiteScore
    iMeta043.70
    Bioactive Materials038.30
    Green Synthesis and Catalysis010.70
    Current Research in Biotechnology08.60
    Journal of Water Process Engineering09.60
    Chemical and Biological Technologies in Agriculture09.00
    GM Crops & Food-Biotechnology in Agriculture and the Food Chain199.10
    Biomimetics06.20
    CRISPR Journal07.90
    Journal of Genetic Engineering and Biotechnology06.30
    期刊分区表同大类学科的热搜期刊 浏览次数
    Energy2240762
    APPLIED ENERGY1769986
    Fuel1764926
    MEASUREMENT1681854
    IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT1631560
    IEEE SENSORS JOURNAL1580570
    Construction and Building Materials1574986
    SEPARATION AND PURIFICATION TECHNOLOGY1291040
    INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH1143301
    IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS1132189
  •  

    IEEE Journal of the Electron Devices Society IEEE Journal of the Electron Devices Society
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    稳步上升 表现平稳 逐渐下降  刷新
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  • 中国学者近期发表的论文
    1.An Improved SVR-Based Broadband Behavioral Model for RF Power Transistors

    Author: Gao, Zhiwei; Crupi, Giovanni; Cai, Jialin
    Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 274-286. DOI: 10.1109/JEDS.2026.3693317
        DOI
    2.Microchannel Cooling for Performance Enhancement of GaN-on-Si HEMT With a Low Rj-a of 13.5 K/W

    Author: Zhou, Jiajun; Feng, Xin; Zhang, Weihang; Dang, Kui; Zhang, Yachao; Ren, Zeyang; He, Yanjing; Liu, Xianhe; Zhou, Hong; Liu, Zhihong; Hao, Yue; Zhang, Jincheng
    Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 85-92. DOI: 10.1109/JEDS.2026.3658238
        DOI
    3.Miller-Current Suppressing Technology for False Turn-On Protection of Commercial p-GaN HEMTs

    Author: Liu, Ziheng; He, Jiayin; Peng, Hongjie; Gao, Ju; Xia, Wenbo; Ao, Chengkang; Wang, Jinyan; Wang, Maojun; Wei, Jin; Xie, Yong
    Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 113-121. DOI: 10.1109/JEDS.2026.3661537
        DOI
    4.Simulation Study on the Scalability of Channel-All-Around Reconfigurable Field-Effect Transistors With Gate-Controlled Polarity

    Author: Huo, Ran; Ou, Shijun; Wu, Zhehao; Zhang, Han; Lv, Bowen; Shao, Yvyang; Ma, Zichao; Zhang, Min; Chan, Mansun; Zhou, Changjian
    Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 93-101. DOI: 10.1109/JEDS.2026.3659128
        DOI
    5.Research on 4H-SiC Photoconductive Semiconductor Switch Employing Composite Anti-Reflection Coating

    Author: Lv, Haojie; Yu, Xiaoqing; Li, Lun; Zhang, Peiyu
    Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 137-144. DOI: 10.1109/JEDS.2026.3662337
        DOI
    6.Evaluation of Interface Traps Within Drift Region in LDMOS Using a Multi-Pulse Test Method

    Author: Guo, Qianwen; Cao, Jiawei; Zhou, Ke; Liu, Fang; Zhao, Dongyan; Chen, Yanning; Wu, Bo; Deng, Yongfeng; Gao, Dawei; Ke, Xugang; Li, Junkang; Zhang, Rui
    Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 145-150. DOI: 10.1109/JEDS.2026.3661617
        DOI
    7.Dynamic Evolution of Hydrogen in IGZO Transistors for PBTI Improvement by Low-Temperature Atmosphere Annealing

    Author: Xiang, Liang; Yan, Gangping; Yang, Hong; Yang, Shangbo; Xu, Gaobo; Sun, Mingyang; Wang, Guilei; Yin, Huaxiang; Wang, Xiaolei; Luo, Jun; Wang, Wenwu
    Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 30-35. DOI: 10.1109/JEDS.2025.3642582
        DOI
    8.Understanding Frequency Dependence of Trap Generation Under AC Positive Bias Temperature Instability Stress in Si n-FinFETs

    Author: Shi, Yunfei; Chang, Hao; Yang, Hong; Zhang, Qiangzhu; Liu, Qianqian; Tang, Bo; Zhou, Longda; Ji, Zhigang; Li, Junjie; He, Xiaobin; Li, Junfeng; Yin, Huaxiang; Wang, Xiaolei; Luo, Jun; Wang, Wenwu
    Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 450-455. DOI: 10.1109/JEDS.2025.3567049
        DOI
    9.Impact of the Schottky Barrier Height on the Carrier Velocity Overshoot Behaviors in SOI nMOSFETs With Metal Source/Drain

    Author: Su, Rui; Jing, Yan; Zhang, Xinyi; Jiang, Yi; Gao, Dawei; Schwarzenbach, Walter; Nguyen, Bich-Yen; Li, Junkang; Robertson, John; Zhang, Rui
    Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 464-470. DOI: 10.1109/JEDS.2025.3569242
        DOI
    10.Optimize Gate-All-Around Devices Using Wide Neural Network-Enhanced Bayesian Optimization

    Author: Shen, Jiaye; Li, Zhiqiang; Yao, Zhenjie
    Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 456-463. DOI: 10.1109/JEDS.2025.3569528
        DOI
  • 同大类学科的其他著名期刊名称 h-index CiteScore
    Nature Reviews Bioengineering040.30
    Nature Electronics052.50
    PROGRESS IN ENERGY AND COMBUSTION SCIENCE16187.50
    Annual Review of Fluid Mechanics16343.30
    International Journal of Extreme Manufacturing029.30
    PROGRESS IN AEROSPACE SCIENCES9734.80
    INTERNATIONAL JOURNAL OF MACHINE TOOLS & MANUFACTURE13335.30
    Green Energy and Intelligent Transportation026.80
    Applied Mechanics Reviews9928.30
    Advances in Applied Energy026.60
    同分区等级的其他期刊名称 h-index CiteScore
    Foundations and Trends in Computer Graphics and Vision032.80
    PROGRESS IN REACTION KINETICS AND MECHANISM2321.60
    Journal of Obesity & Metabolic Syndrome014.40
    Advanced Sensor and Energy Materials03.70
    Business & Information Systems Engineering018.50
    Business & Information Systems Engineering018.50
    Battery Energy015.10
    JOURNAL OF THE RENIN-ANGIOTENSIN-ALDOSTERONE SYSTEM425.50
    PROGRESS IN PHOTOVOLTAICS11518.50
    Degenerative Neurological and Neuromuscular Disease00.00
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