2022年12月最新中科院JCR期刊分区表数据(升级版)已经更新,欢迎查询! 如果您对期刊系统有任何需求或者问题,欢迎
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期刊名字![]() | JOURNAL OF CRYSTAL GROWTH J CRYST GROWTH LetPub评分 5.7
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声誉 6.4 影响力 4.5 速度 8.7 | |||||||||||||||||||||||||
期刊ISSN | 0022-0248 | 微信扫码收藏此期刊 | ||||||||||||||||||||||||
2021-2022最新影响因子 (数据来源于搜索引擎) | 1.830 点击查看影响因子趋势图 | |||||||||||||||||||||||||
2021-2022自引率 | 8.10%点击查看自引率趋势图 | |||||||||||||||||||||||||
h-index | 136 | |||||||||||||||||||||||||
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期刊简介 | The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth. | |||||||||||||||||||||||||
期刊官方网站 | http://www.elsevier.com/wps/find/journaldescription.cws_home/505670/description#description | |||||||||||||||||||||||||
期刊投稿网址 | https://www.editorialmanager.com/CRYS | |||||||||||||||||||||||||
期刊语言要求 | Language Please write your text in good English (American or British usage is accepted, but not a mixture of these). Authors who feel their English language manuscript may require editing to eliminate possible grammatical or spelling errors and to conform to correct scientific English may wish to use the English Language Editing service. 经LetPub语言功底雄厚的美籍native English speaker精心编辑的稿件,不仅能满足JOURNAL OF CRYSTAL GROWTH的语言要求,还能让JOURNAL OF CRYSTAL GROWTH编辑和审稿人得到更好的审稿体验,让稿件最大限度地被JOURNAL OF CRYSTAL GROWTH编辑和审稿人充分理解和公正评估。LetPub的专业SCI论文编辑服务(包括SCI论文英语润色,同行资深专家修改润色,SCI论文专业翻译,SCI论文格式排版,专业学术制图等)帮助作者准备稿件,已助力全球15万+作者顺利发表论文。部分发表范例可查看:服务好评 论文致谢 。 提交文稿 | |||||||||||||||||||||||||
是否OA开放访问 | No | |||||||||||||||||||||||||
通讯方式 | ELSEVIER SCIENCE BV, PO BOX 211, AMSTERDAM, NETHERLANDS, 1000 AE | |||||||||||||||||||||||||
出版商 | Elsevier | |||||||||||||||||||||||||
涉及的研究方向 | 化学-晶体学 | |||||||||||||||||||||||||
出版国家或地区 | NETHERLANDS | |||||||||||||||||||||||||
出版语言 | Multi-Language | |||||||||||||||||||||||||
出版周期 | Biweekly | |||||||||||||||||||||||||
出版年份 | 1967 | |||||||||||||||||||||||||
年文章数 | 320点击查看年文章数趋势图 | |||||||||||||||||||||||||
Gold OA文章占比 | 2.50% | |||||||||||||||||||||||||
研究类文章占比: 文章 ÷(文章 + 综述) | 100.00% | |||||||||||||||||||||||||
WOS期刊SCI分区 ( 2021-2022年最新版) | WOS分区等级:3区
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中科院《国际期刊预警 名单(试行)》名单 | 2023年01月发布的2023版:不在预警名单中 2021年12月发布的2021版:不在预警名单中 2021年01月发布的2020版:不在预警名单中 | |||||||||||||||||||||||||
中科院SCI期刊分区 ( 2022年12月最新升级版) | 点击查看中科院SCI期刊分区趋势图
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中科院SCI期刊分区 ( 2021年12月基础版) |
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中科院SCI期刊分区 ( 2021年12月升级版) |
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中科院SCI期刊分区 ( 2020年12月旧的升级版) |
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SCI期刊收录coverage | Science Citation Index Expanded (SCIE) (2020年1月,原SCI撤销合并入SCIE,统称SCIE) Scopus (CiteScore) | |||||||||||||||||||||||||
PubMed Central (PMC)链接 | http://www.ncbi.nlm.nih.gov/nlmcatalog?term=0022-0248%5BISSN%5D | |||||||||||||||||||||||||
平均审稿速度 | 网友分享经验: 平均2.6个月 来源Elsevier官网: 平均10周 | |||||||||||||||||||||||||
平均录用比例 | 网友分享经验: 容易 | |||||||||||||||||||||||||
LetPub助力发表 | 经LetPub编辑的稿件平均录用比例是未经润色的稿件的1.5倍,平均审稿时间缩短40%。众多作者在使用LetPub的专业SCI论文编辑服务(包括SCI论文英语润色,同行资深专家修改润色,SCI论文专业翻译,SCI论文格式排版,专业学术制图等)后论文在JOURNAL OF CRYSTAL GROWTH顺利发表。
快看看作者怎么说吧:服务好评 论文致谢 | |||||||||||||||||||||||||
在线出版周期 | 来源Elsevier官网: 平均9.2周 | |||||||||||||||||||||||||
期刊常用信息链接 |
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中国学者近期发表的论文 | |
1. | Growth of 4H-SiC epitaxial layers at temperatures below 1500 degrees C using trichlorosilane (TCS) Author: Yang, Shangyu; Zhao, Siqi; Chen, Junhong; Yan, Guoguo; Shen, Zhanwei; Zhao, Wanshun; Wang, Lei; Zhang, Yang; Liu, Xingfang; Sun, Guosheng; Zeng, Yiping Journal: JOURNAL OF CRYSTAL GROWTH. 2023; Vol. 612, Issue , pp. -. DOI: 10.1016/j.jcrysgro.2022.127058 DOI |
2. | Biomineralization inspired crystal growth for biomimetic materials preparation Author: Wang, Yihua; Liu, Zhaoming; Pan, Haihua; Tang, Ruikang Journal: JOURNAL OF CRYSTAL GROWTH. 2023; Vol. 603, Issue , pp. -. DOI: 10.1016/j.jcrysgro.2022.127029 DOI |
3. | Green synthesis of NdOHCO3 via a carbon dioxide carbonatation process in mild conditions Author: Hua, Yong; Wang, Dong; Cui, Zhenjie; Guo, Jianwei; Cao, Jianwei; Wang, Zhi Journal: JOURNAL OF CRYSTAL GROWTH. 2023; Vol. 613, Issue , pp. -. DOI: 10.1016/j.jcrysgro.2023.127211 DOI |
4. | Nonisothermal crystallization kinetics of potassium chloride produced by stirred crystallization Author: Zheng, Dan; Xu, Menglin; Wang, Jiao; Ma, Yulan; Tian, Yongqi; Shen, Yueqiu; Wu, Xieping; Yang, Meihui Journal: JOURNAL OF CRYSTAL GROWTH. 2023; Vol. 603, Issue , pp. -. DOI: 10.1016/j.jcrysgro.2022.127035 DOI |
5. | Numerical simulation of flow and mass transfer during growth of the long seed KDP crystals under 2D translation method Author: Liu, Hang; Li, Mingwei; Chen, Duanyang; Qi, Hongji; Hu, Yue; Chen, Shuxian; Xiao, Yi Journal: JOURNAL OF CRYSTAL GROWTH. 2023; Vol. 603, Issue , pp. -. DOI: 10.1016/j.jcrysgro.2022.127026 DOI |
6. | Estimation of hole mobility in hydrogen-terminated diamond MOSFET with high-k stacked gate dielectrics Author: Li, Yao; Wang, Xi; Pu, Hongbin Journal: JOURNAL OF CRYSTAL GROWTH. 2023; Vol. 603, Issue , pp. -. DOI: 10.1016/j.jcrysgro.2022.127010 DOI |
7. | Direct comparison of silicon carbide and silicon diode avalanche shaper in multi-pulse applications Author: Guo, Dengyao; Zhou, Yu; Tang, Xiaoyan; Zhang, Yuming Journal: JOURNAL OF CRYSTAL GROWTH. 2023; Vol. 603, Issue , pp. -. DOI: 10.1016/j.jcrysgro.2022.127007 DOI |
8. | Epitaxy of tungsten on polycrystalline molybdenum using chemical vapor transport deposition technology Author: Xie, Yajuan; Tan, Chengwen; Yu, Xiaodong; Zhu, Hao; Nie, Zhihua Journal: JOURNAL OF CRYSTAL GROWTH. 2023; Vol. 603, Issue , pp. -. DOI: 10.1016/j.jcrysgro.2022.127046 DOI |
9. | Impact of Br-doping on the optical and optoelectronic properties of CsPbCl3 crystals Author: Wang, Qing; Gong, Zheng; Wu, Shufan; Pan, Shangke; Pan, Jianguo Journal: JOURNAL OF CRYSTAL GROWTH. 2023; Vol. 604, Issue , pp. -. DOI: 10.1016/j.jcrysgro.2022.127039 DOI |
10. | Enhancing ultraviolet response of NiO/Si heterojunction by high temperature anneal Author: Wang, Xi; Li, Yao; Pu, Hongbin; Hu, Jichao; Xu, Jianning; Qiu, Mingxuan; Fang, Jueyuan Journal: JOURNAL OF CRYSTAL GROWTH. 2023; Vol. 604, Issue , pp. -. DOI: 10.1016/j.jcrysgro.2022.127050 DOI |
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