[PDF] from au.dkI Gorczyca, T Suski, NE Christensen… - Physical Review B, 2011 - APS Chemical and size contributions to the band gap bowing of nitride semiconducting alloys (Inx Ga1−x N, Inx Al1−x N, and Alx Ga1−x N) are analyzed. It is shown that the band gap deformation potentials of the binary constituents determine the gap bowing in the ternary alloys. The ... Cited by 1 - Related articles - All 3 versions
I Gorczyca, T Suski, NE Christensen… - Applied Physics Letters, 2011 - link.aip.org Structural properties of InxGayAl1−x−yN alloys are derived from total-energy minimization within the local-density approximation (LDA). The electronic properties are studied by band structure calculations including a semiempirical correction for the “LDA gap error.” The effects of ... Related articles - All 4 versions
[PDF] from 159.226.36.49T Sun, MQ Wang, YJ Sun, BP Wang… - Chinese Physics …, 2011 - iopscience.iop.org Page 1. Deflection Reduction of GaN Wafer Bowing by Coating or Cutting Grooves in the Substrates This article has been downloaded from IOPscience. ... Vol.28,No.4(2011)047303 Deflection Reduction of GaN Wafer Bowing by Coating or Cutting Grooves in the Substrates * ... Related articles - All 6 versions
TW Huang, WH Hsu, KT Peng… - Journal of Bone and Joint …, 2011 - JBJS (Br) We conducted a retrospective study to investigate the effect of femoral bowing on the placement of components in total knee replacement (TKR), with regard to its effect on reestablishing the correct mechanical axis, as we hypothesised that computer-assisted total knee ... Cited by 1 - Related articles - All 3 versions
Y Yamada - 2011 - spie.org Biexciton binding in Al x Ga 1-x N ternary alloys as a function of alloy composition is reviewed on the basis of our recent experimental observations. The biexciton binding energy in GaN and AlN was evaluated to be 5.6 and 19.3 meV, respectively. The biexciton binding energy in ... Cached
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