[PDF] from jsap.jpT Murase, T Tanikawa, Y Honda… - Japanese Journal of …, 2011 - jjap.jsap.jp A drastic reduction of the dislocation density in a semipolar (11 22) GaN stripe on a patterned Si substrate was achieved by the two-step selective growth of a GaN stripe. After depositing a SiO2 mask on the (11 22) and (000 1) faces of a GaN stripe grown on a (113) Si ... Related articles - View as HTML - All 4 versions
[PDF] from sumdu.edu.uaSD Bhattacharyya, P Mukhopadhyay, P Das… - 2011 - essuir.sumdu.edu.ua ... A STRATEGIC REVIEW OF REDUCTION OF DISLOCATION DENSITY AT THE HETEROGENIOUS JUNCTION OF GAN EPILAYER ON FOREIGN SUBSTRATE ... A good quality metamorphic buffer can only be achieved by reduction of dislocation density at the heterojunction. ... Related articles - All 4 versions
G Okita, S Anayama, N Sato… - Archives of orthopaedic and …, 2011 - Springer ... injury. This is the first report in the liter- ature performing ligamentous reconstruction using suture anchors in a case of severe joint instability after manipu- lative reduction for dislocation of the first carpometacarpal joint. Our surgical ... Related articles - All 3 versions
CB Soh, W Liu, H Hartono, NSS Ang… - Applied Physics …, 2011 - link.aip.org ... of III-nitride LEDs. The reduction in dislocation density in the overgrown GaN is studied by cross-section transmission electron microscopy (TEM) and the pore density is determined from atomic force microscopy (AFM) scan. ... Related articles - All 4 versions
HW Zhang, K Lu, R Pippan, X Huang… - Scripta Materialia, 2011 - Elsevier ... a result of dislocation–solute interaction reducing the mobility of dislocations in both two and three dimensions [6]. Such a reduction in dislocation mobility may also result in deformation- induced twinning; however, this was observed only to a limited extent in the three samples. ... Related articles
[PDF] from jsap.jpT Murase, T Tanikawa, Y Honda… - Japanese Journal of …, 2011 - jjap.jsap.jp A drastic reduction of the dislocation density in a semipolar (11 22) GaN stripe on a patterned Si substrate was achieved by the two-step selective growth of a GaN stripe. After depositing a SiO2 mask on the (11 22) and (000 1) faces of a GaN stripe grown on a (113) Si ... Related articles - View as HTML - All 4 versions
[PDF] from sumdu.edu.uaSD Bhattacharyya, P Mukhopadhyay, P Das… - 2011 - essuir.sumdu.edu.ua ... A STRATEGIC REVIEW OF REDUCTION OF DISLOCATION DENSITY AT THE HETEROGENIOUS JUNCTION OF GAN EPILAYER ON FOREIGN SUBSTRATE ... A good quality metamorphic buffer can only be achieved by reduction of dislocation density at the heterojunction. ... Related articles - All 4 versions
G Okita, S Anayama, N Sato… - Archives of orthopaedic and …, 2011 - Springer ... injury. This is the first report in the liter- ature performing ligamentous reconstruction using suture anchors in a case of severe joint instability after manipu- lative reduction for dislocation of the first carpometacarpal joint. Our surgical ... Related articles - All 3 versions
CB Soh, W Liu, H Hartono, NSS Ang… - Applied Physics …, 2011 - link.aip.org ... of III-nitride LEDs. The reduction in dislocation density in the overgrown GaN is studied by cross-section transmission electron microscopy (TEM) and the pore density is determined from atomic force microscopy (AFM) scan. ... Related articles - All 4 versions
HW Zhang, K Lu, R Pippan, X Huang… - Scripta Materialia, 2011 - Elsevier ... a result of dislocation–solute interaction reducing the mobility of dislocations in both two and three dimensions [6]. Such a reduction in dislocation mobility may also result in deformation- induced twinning; however, this was observed only to a limited extent in the three samples. ... Related articles
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