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T Nishikawa… - US Patent 7,951,962, 2011 - Google Patents
Page 1. inn iiiiiii hi mi mi iiii iiijiii iiiijii mi inn mi mi mi (12) United States Patent
Nishikawa et al. (io) Patent No.: (45) Date of Patent: US 7,951,962 B2 May 31, 2011
(54) ORGANIC SEMICONDUCTOR COMPOUND, ORGANIC ...
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C Yan, X Zhu, J Chen, S Hai, J Xu… - US Patent …, 2011 - Google Patents
... agitator. Sulfuric acid, sodium dithion- ite and phosphoric acid were added into the
kaolin slurry E in the octagonal pool. ... agitator. Sulfuric acid, sodium dithion- ite and
phosphoric acid were added into the slurry E in the octagonal pool. ...
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CB Ward - US Patent 7,951,282, 2011 - Google Patents
... 2 In particular, if it is desired to produce electrolytic manga- nese dioxide ("EMD"), solutions
containing elevated dithion- ate ion levels result in chemical reactions occurring that effect
the quality and purity of the EMD produced in the electrow- inning cells. ...
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HS Sohn, SH Cha, WK Lee, DG Kim… - Macromolecular …, 2011 - Springer
... RAFT polymerization was chosen because it does not require a metal catalyst and also various
types of vinyl monomers including methacrylate monomers can be used.11-13,15
2-Cyanoprop-2-yl-1-dithion- aphthalate (CPDN) was synthesized and used as the RAFT chain ...
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MY Chaika, TA Kravchenko, EV Bulavina… - Russian Journal of …, 2011 - Springer
... 1). For sodium dithion ite, the concentration of copper on the surface of a grain is higher than
in the volume of the grain; for hydrazine, the concentration of copper on surface decreases due
to the removal of copper particles by the evolving gases during chemical precipitation. ...
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