2024年6月最新影响因子数据已经更新,欢迎查询! 如果您对期刊系统有任何需求或者问题,欢迎
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期刊名字 | IEEE ELECTRON DEVICE LETTERS IEEE ELECTR DEVICE L (此期刊被最新的JCR期刊SCIE收录) LetPub评分 8.2
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声誉 8.8 影响力 7.5 速度 9.3 | |||||||||||||||||||||
期刊ISSN | 0741-3106 | 微信扫码收藏此期刊 | ||||||||||||||||||||
2023-2024最新影响因子 (数据来源于搜索引擎) | 4.1 点击查看影响因子趋势图 | |||||||||||||||||||||
实时影响因子 | 截止2024年10月29日:3.268 | |||||||||||||||||||||
2023-2024自引率 | 9.80%点击查看自引率趋势图 | |||||||||||||||||||||
五年影响因子 | 4.2 | |||||||||||||||||||||
JCI期刊引文指标 | 1.13 | |||||||||||||||||||||
h-index | 135 | |||||||||||||||||||||
CiteScore ( 2024年最新版) |
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期刊简介 |
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期刊官方网站 | http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55 | |||||||||||||||||||||
期刊投稿网址 | http://mc.manuscriptcentral.com/edl | |||||||||||||||||||||
期刊语言要求 | 经LetPub语言功底雄厚的美籍native English speaker精心编辑的稿件,不仅能满足IEEE ELECTRON DEVICE LETTERS的语言要求,还能让IEEE ELECTRON DEVICE LETTERS编辑和审稿人得到更好的审稿体验,让稿件最大限度地被IEEE ELECTRON DEVICE LETTERS编辑和审稿人充分理解和公正评估。LetPub的专业SCI论文编辑服务(包括SCI论文英语润色,同行资深专家修改润色,SCI论文专业翻译,SCI论文格式排版,专业学术制图等)帮助作者准备稿件,已助力全球15万+作者顺利发表论文。部分发表范例可查看:服务好评 论文致谢(1篇) 。
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是否OA开放访问 | No | |||||||||||||||||||||
通讯方式 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141 | |||||||||||||||||||||
出版商 | Institute of Electrical and Electronics Engineers Inc. | |||||||||||||||||||||
涉及的研究方向 | 工程技术-工程:电子与电气 | |||||||||||||||||||||
出版国家或地区 | UNITED STATES | |||||||||||||||||||||
出版语言 | English | |||||||||||||||||||||
出版周期 | Monthly | |||||||||||||||||||||
出版年份 | 1980 | |||||||||||||||||||||
年文章数 | 477点击查看年文章数趋势图 | |||||||||||||||||||||
Gold OA文章占比 | 4.62% | |||||||||||||||||||||
研究类文章占比: 文章 ÷(文章 + 综述) | 100.00% | |||||||||||||||||||||
WOS期刊SCI分区 ( 2023-2024年最新版) | WOS分区等级:2区
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中国科学院《国际期刊预警 名单(试行)》名单 | 2024年02月发布的2024版:不在预警名单中 2023年01月发布的2023版:不在预警名单中 2021年12月发布的2021版:不在预警名单中 2020年12月发布的2020版:不在预警名单中 | |||||||||||||||||||||
中国科学院SCI期刊分区 ( 2023年12月最新升级版) | 点击查看中国科学院SCI期刊分区趋势图
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中国科学院SCI期刊分区 ( 2022年12月升级版) |
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中国科学院SCI期刊分区 ( 2021年12月旧的升级版) |
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SCI期刊收录coverage | Science Citation Index Expanded (SCIE) (2020年1月,原SCI撤销合并入SCIE,统称SCIE) Scopus (CiteScore) | |||||||||||||||||||||
PubMed Central (PMC)链接 | http://www.ncbi.nlm.nih.gov/nlmcatalog?term=0741-3106%5BISSN%5D | |||||||||||||||||||||
平均审稿速度 | 网友分享经验: 平均1.3个月 | |||||||||||||||||||||
平均录用比例 | 网友分享经验: 约25% | |||||||||||||||||||||
APC文章处理费信息 | 版面费:平均 660 元/页 | |||||||||||||||||||||
LetPub助力发表 | 经LetPub编辑的稿件平均录用比例是未经润色的稿件的1.5倍,平均审稿时间缩短40%。众多作者在使用LetPub的专业SCI论文编辑服务(包括SCI论文英语润色,同行资深专家修改润色,SCI论文专业翻译,SCI论文格式排版,专业学术制图等)后论文在IEEE ELECTRON DEVICE LETTERS顺利发表。
快看看作者怎么说吧:服务好评 论文致谢 | |||||||||||||||||||||
期刊常用信息链接 |
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中国学者近期发表的论文 | |
1. | Development of a Cesium Vapor MEMS Cell for Differential Measurement of Microwave Electromagnetically Induced Transparency Author: Zhu, Jingtong; Zhao, Rui; Li, Zhonghao; Hao, Desheng; Zu, Kaixuan; Shi, Yunbo; Tang, Jun; Liu, Jun Journal: IEEE ELECTRON DEVICE LETTERS. 2023; Vol. 44, Issue 1, pp. 132-135. DOI: 10.1109/LED.2022.3219922 DOI |
2. | Ultradense One-Memristor Ternary-Content-Addressable Memory Based on Ferroelectric Diodes Author: Zhang, Zhaohao; Zhang, Fan; Zhang, Yadong; Xu, Gaobo; Wu, Zhenhua; Zhang, Qingzhu; Li, Yongliang; Yin, Huaxiang; Luo, Jun; Wang, Wenwu; Ye, Tianchun Journal: IEEE ELECTRON DEVICE LETTERS. 2023; Vol. 44, Issue 1, pp. 64-67. DOI: 10.1109/LED.2022.3223335 DOI |
3. | Photolithographic Patterning of Polypyrrole on Elastic Polydimethylsiloxane for Flexible and Conformal Organic Electronics Author: Zhang, Tao; Wang, Xue; Tong, Yanhong; Sun, Jing; Zhao, Xiaoli; Liu, Xiaoqian; Han, Xu; Tang, Qingxin; Liu, Yichun Journal: IEEE ELECTRON DEVICE LETTERS. 2023; Vol. 44, Issue 1, pp. 76-79. DOI: 10.1109/LED.2022.3221521 DOI |
4. | Investigation to the Carrier Transport Properties in Heterojunction-Channel Amorphous Oxides Thin-Film Transistors Using Dual-Gate Bias Author: Yang, Huan; Zhou, Xiaoliang; Lu, Lei; Zhang, Shengdong Journal: IEEE ELECTRON DEVICE LETTERS. 2023; Vol. 44, Issue 1, pp. 68-71. DOI: 10.1109/LED.2022.3223080 DOI |
5. | An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps Author: Wu, Yanlin; Wei, Jin; Wang, Maojun; Nuo, Muqin; Yang, Junjie; Lin, Wei; Zheng, Zheyang; Zhang, Li; Hua, Mengyuan; Yang, Xuelin; Hao, Yilong; Chen, Kevin J.; Shen, Bo Journal: IEEE ELECTRON DEVICE LETTERS. 2023; Vol. 44, Issue 1, pp. 25-28. DOI: 10.1109/LED.2022.3222170 DOI |
6. | Excitation/Inhibition Balancing in 2D Synaptic Transistors With Minority-Carrier Charge Dynamics Author: Wu, Rongqi; Liu, Xiaochi; Wang, Zhongwang; Jing, Yumei; Yuan, Yahua; Tang, Kui; Dai, Xianfu; Qiu, Aocheng; Jaiswal, Hemendra N.; Sun, Jia; Li, Huamin; Sun, Jian Journal: IEEE ELECTRON DEVICE LETTERS. 2023; Vol. 44, Issue 1, pp. 156-159. DOI: 10.1109/LED.2022.3224471 DOI |
7. | 2.69 kV/2.11 m Omega center dot cm(2) and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage Author: Wei, Xing; Shen, Wenchao; Zhou, Xin; Tang, Wenbo; Ma, Yongjian; Chen, Tiwei; Wang, Dawei; Fu, Houqiang; Zhang, Xiaodong; Lin, Wenkui; Yu, Guohao; Cai, Yong; Zhang, Baoshun Journal: IEEE ELECTRON DEVICE LETTERS. 2023; Vol. 44, Issue 1, pp. 13-16. DOI: 10.1109/LED.2022.3220600 DOI |
8. | Low Temperature Cu-Cu Bonding Using an Intermediate Sacrificial Sn Layer Author: Wang, Zilin; Shi, Yunfan; Wang, Zheyao Journal: IEEE ELECTRON DEVICE LETTERS. 2023; Vol. 44, Issue 1, pp. 116-119. DOI: 10.1109/LED.2022.3221375 DOI |
9. | Experimental Demonstration of Compact S-Band MW-Level Metamaterial-Inspired Klystron Author: Wang, Xin; Zhang, Xuanming; Zou, Jianjun; Wang, Shaozhe; Huang, Junjie; Li, Shifeng; Li, Yongming; Liu, Yurong; Hu, Min; Gong, Yubin; Schamiloglu, Edl; Basu, B. N.; Duan, Zhaoyun Journal: IEEE ELECTRON DEVICE LETTERS. 2023; Vol. 44, Issue 1, pp. 152-155. DOI: 10.1109/LED.2022.3223909 DOI |
10. | Tunable Emission Wavelength and Chromaticity Electroluminescence Realized in Ho3+ Doped ZnO Microspheres Heterojunction Author: Wang, Xiaoxuan; Huang, Chaoyang; Li, Zhuxin; Chen, Jinping; Shi, Zengliang; Cui, Qiannan; Xu, Chunxiang Journal: IEEE ELECTRON DEVICE LETTERS. 2023; Vol. 44, Issue 1, pp. 104-107. DOI: 10.1109/LED.2022.3223402 DOI |
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