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期刊名字 | IEEE Journal of the Electron Devices Society IEEE J ELECTRON DEVI (此期刊被最新的JCR期刊SCIE收录) LetPub评分 6.3
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声誉 7.1 影响力 5.0 速度 9.4 | |||||||||||||||||||||||||
期刊ISSN | 2168-6734 | 微信扫码收藏此期刊 | ||||||||||||||||||||||||
2023-2024最新影响因子 (数据来源于搜索引擎) | 2 点击查看影响因子趋势图 | |||||||||||||||||||||||||
实时影响因子 | 截止2024年10月29日:1.793 | |||||||||||||||||||||||||
2023-2024自引率 | 5.00%点击查看自引率趋势图 | |||||||||||||||||||||||||
五年影响因子 | 2.3 | |||||||||||||||||||||||||
JCI期刊引文指标 | 0.55 | |||||||||||||||||||||||||
h-index | 23 | |||||||||||||||||||||||||
CiteScore ( 2024年最新版) |
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期刊简介 |
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期刊官方网站 | https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494 | |||||||||||||||||||||||||
期刊投稿网址 | http://mc.manuscriptcentral.com/jeds | |||||||||||||||||||||||||
期刊语言要求 | 经LetPub语言功底雄厚的美籍native English speaker精心编辑的稿件,不仅能满足IEEE Journal of the Electron Devices Society的语言要求,还能让IEEE Journal of the Electron Devices Society编辑和审稿人得到更好的审稿体验,让稿件最大限度地被IEEE Journal of the Electron Devices Society编辑和审稿人充分理解和公正评估。LetPub的专业SCI论文编辑服务(包括SCI论文英语润色,同行资深专家修改润色,SCI论文专业翻译,SCI论文格式排版,专业学术制图等)帮助作者准备稿件,已助力全球15万+作者顺利发表论文。部分发表范例可查看:服务好评 论文致谢 。
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是否OA开放访问 | Yes | |||||||||||||||||||||||||
OA期刊相关信息 | 文章处理费:需要( USD1350; ) 文章处理费豁免:查看说明 其他费用:没有 期刊主题关键词:field effect transistors、logic gates、integrated circuit devices、display technologies、wearable devices 相关链接:Aims & ScopeAuthor InstructionsEditorial BoardAnonymous peer review | |||||||||||||||||||||||||
通讯方式 | 445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141 | |||||||||||||||||||||||||
出版商 | Institute of Electrical and Electronics Engineers Inc. | |||||||||||||||||||||||||
涉及的研究方向 | Biochemistry, Genetics and Molecular Biology-Biotechnology | |||||||||||||||||||||||||
出版国家或地区 | UNITED STATES | |||||||||||||||||||||||||
出版语言 | English | |||||||||||||||||||||||||
出版周期 | ||||||||||||||||||||||||||
出版年份 | 0 | |||||||||||||||||||||||||
年文章数 | 92点击查看年文章数趋势图 | |||||||||||||||||||||||||
Gold OA文章占比 | 97.60% | |||||||||||||||||||||||||
研究类文章占比: 文章 ÷(文章 + 综述) | 98.91% | |||||||||||||||||||||||||
WOS期刊SCI分区 ( 2023-2024年最新版) | WOS分区等级:3区
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中国科学院《国际期刊预警 名单(试行)》名单 | 2024年02月发布的2024版:不在预警名单中 2023年01月发布的2023版:不在预警名单中 2021年12月发布的2021版:不在预警名单中 2020年12月发布的2020版:不在预警名单中 | |||||||||||||||||||||||||
中国科学院SCI期刊分区 ( 2023年12月最新升级版) | 点击查看中国科学院SCI期刊分区趋势图
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中国科学院SCI期刊分区 ( 2022年12月升级版) |
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中国科学院SCI期刊分区 ( 2021年12月旧的升级版) |
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SCI期刊收录coverage | Science Citation Index Expanded (SCIE) (2020年1月,原SCI撤销合并入SCIE,统称SCIE) Scopus (CiteScore) Directory of Open Access Journals (DOAJ) | |||||||||||||||||||||||||
PubMed Central (PMC)链接 | http://www.ncbi.nlm.nih.gov/nlmcatalog?term=2168-6734%5BISSN%5D | |||||||||||||||||||||||||
平均审稿速度 | 网友分享经验: 9 Weeks | |||||||||||||||||||||||||
平均录用比例 | 网友分享经验: | |||||||||||||||||||||||||
版面费/APC文章处理费信息 | 文章处理费:需要( USD1350; ) 文章处理费豁免:查看说明 其他费用:没有 LetPub提供文章处理费(APC)支持服务,可以用人民币支付版面费啦! | |||||||||||||||||||||||||
LetPub助力发表 | 经LetPub编辑的稿件平均录用比例是未经润色的稿件的1.5倍,平均审稿时间缩短40%。众多作者在使用LetPub的专业SCI论文编辑服务(包括SCI论文英语润色,同行资深专家修改润色,SCI论文专业翻译,SCI论文格式排版,专业学术制图等)后论文在IEEE Journal of the Electron Devices Society顺利发表。
快看看作者怎么说吧:服务好评 论文致谢 | |||||||||||||||||||||||||
期刊常用信息链接 |
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中国学者近期发表的论文 | |
1. | Monolithic Dual-Gate E-Mode Device-Based NAND Logic Block for GaN MIS-HEMTs IC Platform Author: Zhu, Yuhao; Li, Fan; Cui, Miao; Fang, Zhicheng; Li, Ang; Yang, Dongyi; Zhao, Yinchao; Wen, Huiqing; Liu, Wen Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023; Vol. 11, Issue , pp. 230-234. DOI: 10.1109/JEDS.2023.3265372 DOI |
2. | New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs Author: Zhu, Kunfeng; Zhang, Peijian; Xu, Zicheng; Wang, Tao; Yi, Xiaohui; Hong, Min; Yang, Yonghui; Zhang, Guangsheng; Liu, Jian; Wei, Jianan; Pu, Yang; Huang, Dong; Luo, Ting; Chen, Xian; Tang, Xinyue; Tan, Kaizhou; Chen, Wensuo Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023; Vol. 11, Issue , pp. 30-35. DOI: 10.1109/JEDS.2023.3239341 DOI |
3. | Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT With Improved Performance Trade-Off Author: Zhang, Meng; Zhang, Yamin; Li, Baikui; Feng, Shiwei; Hua, Mengyuan; Tang, Xi; Wei, Jin; Chen, Kevin J. Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023; Vol. 11, Issue , pp. 198-203. DOI: 10.1109/JEDS.2023.3259639 DOI |
4. | Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI pMOSFETs With Al2O3/GeOx Gate Stacks Author: Sun, Yu; Schwarzenbach, Walter; Yuan, Sicong; Chen, Zhuo; Yang, Yanbin; Nguyen, Bich-Yen; Gao, Dawei; Zhang, Rui Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023; Vol. 11, Issue , pp. 210-215. DOI: 10.1109/JEDS.2023.3260978 DOI |
5. | Effect of Amorphous Layer at the Heterogeneous Interface on the Device Performance of beta-Ga2O3/Si Schottky Barrier Diodes Author: Qu, Zhenyu; Xu, Wenhui; You, Tiangui; Shen, Zhenghao; Zhao, Tiancheng; Huang, Kai; Yi, Ailun; Zhang, David Wei; Han, Genquan; Ou, Xin; Hao, Yue Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023; Vol. 11, Issue , pp. 135-140. DOI: 10.1109/JEDS.2023.3242968 DOI |
6. | Novel Stacked Passivation Structure for AlGaN/GaN HEMTs on Silicon With High Johnson's Figures of Merit Author: Liu, Xiaoyi; Qin, Jian; Chen, Jingxiong; Chen, Jianyu; Wang, Hong Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023; Vol. 11, Issue , pp. 130-134. DOI: 10.1109/JEDS.2023.3241306 DOI |
7. | RF Overdrive Burnout Behavior and Mechanism Analysis of GaN HEMTs Based on High Speed Camera Author: Liu, Chang; Liu, Hong Xia; Chen, Yi Qiang; Shi, Yi Jun; Xie, Yu Han; Chen, Si; Lai, Ping; He, Zhi Yuan; Huang, Yun Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023; Vol. 11, Issue , pp. 47-53. DOI: 10.1109/JEDS.2023.3239100 DOI |
8. | Current Prospects and Challenges in Negative-Capacitance Field-Effect Transistors Author: Islam, Md. Sherajul; Mazumder, Abdullah Al Mamun; Zhou, Changjian; Stampfl, Catherine; Park, Jeongwon; Yang, Cary Y. Y. Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023; Vol. 11, Issue , pp. 235-247. DOI: 10.1109/JEDS.2023.3267081 DOI |
9. | InAlN/GaN HEMT With n(+)GaN Contact Ledge Structure for Millimeter-Wave Low Voltage Applications Author: Gong, Can; Mi, Minhan; Zhou, Yuwei; Wang, Pengfei; Chen, Yilin; Liu, Jielong; Han, Yutong; An, Sirui; Guo, Siyin; Zhang, Meng; Zhu, Qing; Yang, Mei; Ma, Xiaohua; Hao, Yue Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023; Vol. 11, Issue , pp. 72-77. DOI: 10.1109/JEDS.2023.3234695 DOI |
10. | Study on Flake Graphite Cathode Surface Microstructure in Relativistic Magnetrons Author: Chen, Tingxu; Jiang, Lihui; Yang, Tao; Li, Tianming; Hao, Fu; Yang, Liu; Cheng, Renjie; Wang, Haiyang Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023; Vol. 11, Issue , pp. 122-129. DOI: 10.1109/JEDS.2023.3242679 DOI |
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